tsm1n80 800v n-channel mosfet 1/9 version: a10 to - 92 sot - 223 product summary v ds (v) r ds(on) ( ) i d (a) 800 21.6 @ v gs =10v 0.15 general description the tsm1n80 is used an advanced termination scheme to provide enhanced voltage-blocking capability wit hout degrading performance over time. in addition, this advanced mosfet is designed to withstand high energ y in avalanche and commutation modes. the new energy eff icient design also offers a drain- to-source diode with a fast recovery time. designed for high voltage, high speed switching applications in power supplies, co nverters and pwm motor controls, these devices are particula rly well suited for bridge circuits where diode spe ed and commutating safe operating areas are critical and o ffer additional and safety margin against unexpecte d voltage transients. features r ds(on) =18 (typ.) @ v gs =10v, i d =0.15a low gate charge @ 5nc (typ.) low crss @ 2.7pf (typ.) fast switching ordering information part no. package packing tsm1n80sct b0 to-92 1kpcs / bulk tsm1n80sct a3 to-92 2kpcs / ammo tsm1n80cw rp sot-223 2.5kpcs / 13 reel absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 800 v gate-source voltage v gs 30 v continuous drain current i d 0.3 a pulsed drain current (note 1) i dm 1 a single pulse avalanche energy (note 2) e as 90 mj avalanche current, repetitive or not-repetitive (no te 1) i ar 1 a total power dissipation @t c = 25 o c to-92 p dtot 3 w sot-223 2.1 operating junction and storage temperature range t j , t stg -55 to +150 o c lead temperature (1/8 from case) t l 10 s thermal performance parameter symbol limit unit thermal resistance - junction to ambient to-92 r ? ja 130 o c/w sot-223 60 notes : surface mounted on fr4 board t 10sec block diagram n-channel mosfet pin definition : 1. gate 2. drain 3. source
tsm1n80 800v n-channel mosfet 2/9 version: a10 electrical specifications (ta=25 o c, unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 1ma bv dss 800 -- -- v drain-source on-state resistance v gs = 10v, i d = 0.15a r ds(on) -- 18 21.6 gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 3 -- 5 v zero gate voltage drain current v ds = 800v, v gs = 0v i dss -- -- 25 ua gate body leakage v gs = 30v, v ds = 0v i gss -- -- 10 ua forward transconductance v ds =40v, i d = 0.1a g fs -- 0.36 -- s diode forward voltage i s = 0.2a, v gs = 0v v sd -- -- 1.4 v dynamic b total gate charge v ds = 640v, i d = 0.3a, v gs = 10v q g -- 5 6 nc gate-source charge q gs -- 1 -- gate-drain charge q gd -- 2 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 155 200 pf output capacitance c oss -- 20 26 reverse transfer capacitance c rss -- 2.7 4 switching c turn-on delay time v gs = 10v, i d = 0.3a, v ds = 400v, r g = 25 t d(on) -- 10 30 ns turn-on rise time t r -- 20 50 turn-off delay time t d(off) -- 16 45 turn-off fall time t f -- 25 60 note 1: pulse test: pulse width <=300us, duty cycle <=2% note 2: (v dd = 50v, i as =0.8a, l=170mh, r g =25 ) note 3: for design reference only, not subject to producti on testing. note 4: switching time is essentially independent of opera ting temperature.
tsm1n80 800v n-channel mosfet 3/9 version: a10 electrical characteristics curve (ta = 25 o c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current gate charge on-resistance vs. junction temperature source-drain diode forward voltage
tsm1n80 800v n-channel mosfet 4/9 version: a10 electrical characteristics curve (ta = 25 o c, unless otherwise noted) on-resistance vs. gate-source voltage threshold voltage maximum safe operating area normalized thermal transient impedance, junction-to -ambient
tsm1n80 800v n-channel mosfet 5/9 version: a10 gate charge test circuit & waveform resistive switching test circuit & waveform e as test circuit & waveform
tsm1n80 800v n-channel mosfet 6/9 version: a10 diode reverse recovery time test circuit & waveform
tsm1n80 800v n-channel mosfet 7/9 version: a10 to-92 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code to-92 dimension dim millimeters inches min max min max a 4.30 4.70 0.169 0.185 b 4.30 4.70 0.169 0.185 c 13.53 (typ) 0.532 (typ) d 0.39 0.49 0.015 0.019 e 1.18 1.28 0.046 0.050 f 3.30 3.70 0.130 0.146 g 1.27 1.31 0.050 0.051 h 0.33 0.43 0.013 0.017
tsm1n80 800v n-channel mosfet 8/9 version: a10 sot-223 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code sot-223 dimension dim millimeters inches min max min max a 6.350 6.850 0.250 0.270 b 2.900 3.100 0.114 0.122 c 3.450 3.750 0.136 0.148 d 0.595 0.635 0.023 0.025 e 4.550 4.650 0.179 0.183 f 2.250 2.350 0.088 0.093 g 0.835 1.035 0.032 0.041 h 6.700 7.300 0.263 0.287 i 0.250 0.355 0.010 0.014 j 10 16 10 16 k 1.550 1.800 0.061 0.071
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